C Yang et al 2009 J. Phys. D: Appl. Phys. 42 152002 doi:10.1088/0022-3727/42/15/152002
C Yang1,2, X M Li1,3, W D Yu1, X D Gao1, X Cao1,2 and Y Z Li1,2
Show affiliationsAn n-type Zn1−x−yBexMgyO thin film was deposited on a p-type Si substrate by pulsed laser deposition to obtain a solar-blind photodetector. The spectral response characteristic with a cutoff wavelength of 280 nm was demonstrated to realize the photodetection of the solar-blind wave zone. The responsivity of the device was improved by inserting an Al-doped ZnO (AZO) contact layer, which was expected to enhance the carrier collection efficiency significantly. Correspondingly, the peak responsivity was improved from 0.003 to 0.11 A W−1 at zero bias, and a high external quantum efficiency of 53% at 270 nm was achieved. The fast rise time reached 20 ns. This work demonstrated the possibility of a wurtzite ZnO based oxide system to realize high performance zero-biased solar-blind photodetectors.
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Issue 15 (7 August 2009)
Received 19 May 2009, in final form 17 June 2009
Published 7 July 2009
C Yang et al 2009 J. Phys. D: Appl. Phys. 42 152002
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