Hisashi Masui et al 2008 J. Phys. D: Appl. Phys. 41 082001 doi:10.1088/0022-3727/41/8/082001
Electroluminescence efficiency of 
-oriented InGaN-based light-emitting diodes at low temperature
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Hisashi Masui, Herbert Kroemer1, Mathew C Schmidt, Kwang-Choong Kim2, Natalie N Fellows, Shuji Nakamura1 and Steven P DenBaars1
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This paper discusses radiative recombination efficiency in electroluminescence of InGaN-based light-emitting diodes prepared on the (1 0 
0) plane. Radiative efficiency was studied over a wide range of temperatures and drive currents on four types of LED samples with different InGaN active-layer thicknesses. Efficiency was minimally affected by active-layer thickness, yet was a strong function of temperature and current. Efficiency reduction at high current was observed on these LEDs, which confirms strain-induced electric polarization fields are not a dominant mechanism. Luminescence intensity was found to be proportional to the square root of current at low temperature. Acceptor freeze-out was suggested to induce hole depletion at increased current; shortage of holes resulted in reduced efficiency and triggered off electron injection into the p-type layer to sustain total current. Injected electrons were shown to lead to the square-root relationship by solving rate equations.
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Issue 8 (21 April 2008)
Received 13 February 2008, in final form 19 February 2008
Published 4 March 2008
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Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature
Hisashi Masui et al 2008 J. Phys. D: Appl. Phys. 41 082001
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