N Aota et al 2008 J. Phys. D: Appl. Phys. 41 074002 doi:10.1088/0022-3727/41/7/074002
Dislocation motions in C60 crystals by an indentation test
N Aota1, M Tachibana2 and K Kojima2
Show affiliationsWe investigated dislocation motions in C60 crystals after indentation, by x-ray topography and etching method. A rosette pattern was observed around an indentation after etching. The dislocations in the rosette were moved by thermal annealing and the positions in the dislocations were measured before and after annealing by the double etching method. The annealing temperature dependence of dislocation motions was measured in the temperature range 490–610 K. The characteristics of dislocation motion showed dislocation locking due to impurity atmosphere. It was concluded that oxygen and oxide of C60 molecules could lock the dislocations. Moreover, a pair of pits in the rosette pattern were observed after annealing. It corresponded to a pair of Shockley's partial dislocations.
- PACS
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81.40.Gh Other heat and thermomechanical treatments
61.72.S- Impurities in crystals
62.20.Qp Friction, tribology, and hardness
- Subjects
- Dates
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Issue 7 (7 April 2008)
Received 6 August 2007, in final form 23 October 2007
Published 12 March 2008
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Dislocation motions in C60 crystals by an indentation test
N Aota et al 2008 J. Phys. D: Appl. Phys. 41 074002
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