R Banerjee et al 2008 J. Phys. D: Appl. Phys. 41 055306 doi:10.1088/0022-3727/41/5/055306
R Banerjee, S Hazra and M K Sanyal
Show affiliationsThe diffusion process on Si (0 0 1) in the presence of a 5 keV Ar+ ion beam has been investigated by monitoring initiation of ripple-pattern formation. The morphology of the surface obtained by scanning tunnelling microscopy measurements in ultrahigh vacuum were characterized using the height-difference correlation function. These measurements clearly show formation of nanostructured ripple patterns having wavelength ~60 nm and height ~0.32 nm at 200 °C. The results demonstrate that ion beam induced and thermal diffusions cannot be treated as additive processes and the observed enhancement of surface diffusion requires lowering of activation energy that arises due to creation of ion-beam induced vacant regions.
68.35.Fx Diffusion; interface formation
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
61.80.Jh Ion radiation effects
81.16.Rf Nanoscale pattern formation
68.35.B- Structure of clean surfaces (and surface reconstruction)
Surfaces, interfaces and thin films
Issue 5 (7 March 2008)
Received 4 January 2008
Published 14 February 2008
R Banerjee et al 2008 J. Phys. D: Appl. Phys. 41 055306
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