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One-dimensional character of Sn doped In2O3 nanowires probed by magnetotransport measurements

A J Chiquito1, A J C Lanfredi2 and E R Leite2

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Magnetotransport data of individual Sn doped In2O3 nanowires were investigated at low temperatures in order to study the characteristic dimensionality of the conduction process and the electron dephasing mechanisms. The magnetoconductance data obtained in these nanowires confirm the theoretical predictions of one-dimensional quantum interference with electron–electron interaction as the dominant scattering mechanism leading to the break of the observed quantum coherence effects.


PACS

73.63.-b Electronic transport in nanoscale materials and structures

81.07.-b Nanoscale materials and structures: fabrication and characterization

Subjects

Nanoscale science and low-D systems

Dates

Issue 4 (21 February 2008)

Received 11 June 2007, in final form 14 December 2007

Published 1 February 2008



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