Qin Wang et al 2008 J. Phys. D: Appl. Phys. 41 035109 doi:10.1088/0022-3727/41/3/035109
Qin Wang1, Rui Jia1, Weihua Guan1, Weilong Li1, Qi Liu1, Yuan Hu1, Shibing Long1, Baoqin Chen1, Ming Liu1,3, Tianchun Ye1, Wensheng Lu2 and Long Jiang2
Show affiliationsIn this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C–V) curves clearly indicate the charge storage in the NCs. The hybrid MOS, however, shows a larger memory window, as compared with RTA MOS. The retention characteristics of the two MOS devices are also investigated. The capacitance versus time (C–t) measurement shows that the hybrid MOS capacitor embedded with Au nanocrystals has a longer retention time. The mechanism of longer retention time for hybrid MOS capacitor is qualitatively discussed.
Issue 3 (7 February 2008)
Received 12 July 2007, in final form 19 December 2007
Published 11 January 2008
Qin Wang et al 2008 J. Phys. D: Appl. Phys. 41 035109
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