Min Zhang et al 2008 J. Phys. D: Appl. Phys. 41 032007 doi:10.1088/0022-3727/41/3/032007
Min Zhang, Wei Chen, Shi-Jin Ding1, Zhi-Ying Liu, Yue Huang, Zhong-Wei Liao and David Wei Zhang
Show affiliationsGrowth of uniformly distributed Ru nanocrystals on Al2O3 is demonstrated via atomic layer deposition using bis(cyclopentadienyl)-ruthenium and oxygen precursors. X-ray photoelectron spectroscopy analyses reveal that metallic Ru nanocrystals were formed in this experiment, and the RuO2 surface is due to oxidation of Ru when exposed to air. The metal-oxide-silicon capacitors with Ru nanocrystals embedded into Al2O3 are electrically measured, exhibiting obvious memory effects such as a large hysteresis memory window of 3.4 V for the sweeping gate voltage of −2.5/ + 8 V and a significant flat-band voltage shift of 3.2 V under the programming of 10 V/1 ms, i.e. an effective electron injection rate as fast as 1.78 × 10−6 C cm−2 ms−1. This relates to the program mechanism of direct tunnelling and a large potential well depth.
81.07.Bc Nanocrystalline materials
73.63.Bd Nanocrystalline materials
Condensed matter: electrical, magnetic and optical
Issue 3 (7 February 2008)
Received 21 October 2007, in final form 15 December 2007
Published 8 January 2008
Min Zhang et al 2008 J. Phys. D: Appl. Phys. 41 032007
Jing Fu et al 2008 J. Micromech. Microeng. 18 095010
Pavel Castro-Villarreal et al JHEP09(2005)066
Dinesh Kumar Venkatachalam et al 2008 Nanotechnology 19 015605
Feng He et al 2008 J. Phys. B: At. Mol. Opt. Phys. 41 081003
N Montelongo-García and T Zannias 2007 J. Phys.: Conf. Ser. 66 012021
Paolo Cea et al JHEP12(2007)097
Joanna Beaumont and Geoff Orford 2003 Metrologia 40 01007
John Foss et al 2008 Meas. Sci. Technol. 19 050101
Arvind Ayyer and Kirone Mallick 2010 J. Phys. A: Math. Theor. 43 045003