Seiji Samukawa et al 2008 J. Phys. D: Appl. Phys. 41 024006 doi:10.1088/0022-3727/41/2/024006
Seiji Samukawa1, Yasushi Ishikawa1, Keiji Okumura1, Yoshinori Sato2, Kazuyuki Tohji2 and Takao Ishida3
Show affiliationsPlasma etching processes have been used for the past 30 years to shrink the pattern size of integrated devices. However, the inherent problems of plasma processes, such as ultraviolet photon radiation damage, limit the effectiveness of etching and surface treatments of nanoscale devices. To overcome these problems, we developed a neutral beam surface treatment process. The process uses neutral beams and a defect-free surface process to fabricate carbon nanotubes and self-assemble mono-layer devices. We found that neutral beams can be used to produce atomically defect-free surfaces in carbon nanotubes and organic molecules. This technique has potential for fabricating nanodevices.
Issue 2 (21 January 2008)
Received 5 June 2007, in final form 15 August 2007
Published 4 January 2008
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