X L Yang et al 2008 J. Phys. D: Appl. Phys. 41 125002 doi:10.1088/0022-3727/41/12/125002
X L Yang1, Z T Chen1, C D Wang1, S Huang1, H Fang1, G Y Zhang1, D L Chen2 and W S Yan3
Show affiliationsWe have investigated the effects of nitrogen vacancies (VN) induced by Mn doping on the electronic structure and transport properties of (Ga,Mn)N films grown by metal organic chemical vapour deposition (MOCVD). The significant increase in n-type carrier concentration in the (Ga,Mn)N film is attributed to the additional VN induced by Mn doping. Temperature-dependent Hall data indicate that the additional VN is the dominant scattering mechanism in the (Ga,Mn)N film in higher temperature regions. The Mn L2,3 x-ray absorption spectra of the (Ga,Mn)N film shows a multiplet structure, indicating that the Mn ions are present mainly in the Mn2+(d5) states. These can be attributed to the electrons transferring from VN, which is well consistent with the electrical properties. An energy level model involving the charge transfer is proposed to explain the observed electronic structure and transport properties in the system.
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.70.Dm X-ray absorption spectra
61.72.J- Point defects and defect clusters
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
Condensed matter: electrical, magnetic and optical
Issue 12 (21 June 2008)
Received 16 March 2008, in final form 29 April 2008
Published 23 May 2008
X L Yang et al 2008 J. Phys. D: Appl. Phys. 41 125002
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