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Al/WO3/Au as the interconnecting layer for efficient tandem white organic light-emitting diodes

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Hongmei Zhang, Yanfeng Dai and Dongge Ma

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White light emission from tandem organic light-emitting diodes consisting of blue and red light units separated by a transparent interconnecting layer of Al/WO3/Au has been realized. The devices have a structure of indium-tin-oxide (ITO)/molybdenum oxide (MoO3) (8 nm)/N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB)(100 nm)/p-bis(p-N,N-diphenyl-aminostyryl)benzene) (DSA-ph):2-methyl-9,10-di(2-naphthyl) anthracene (MADN)(40 nm)/tris(8-hydroxylquinoline) aluminium (Alq3) (10 nm)/LiF(1 nm)/Al(2 nm)/WO3(3 nm)/Au(16 nm)/MoO3(5 nm)/NPB(60 nm)/Alq3: 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)(30 nm)/Alq3(30 nm)/LiF(1 nm)/Al(150 nm). It can be seen that a stable white light emission, including 461 and 491 nm peaks from DSA-ph and 620 nm peak from DCJTB, with Commission International De L'Eclairage chromaticity coordinates from (0.35, 0.33) at 8 V to (0.37, 0.30) at 12 V was obtained. The current efficiency and brightness of the white devices are basically equal to the sum of the blue unit and red unit devices. The maximum brightness reached 20 700 cd m−2 at a bias of 23 V, and the maximum current efficiency was 9.1 cd A−1 at a current density of 0.41 mA cm−2.


PACS

85.60.Jb Light-emitting devices

85.60.Bt Optoelectronic device characterization, design, and modeling

Subjects

Electronics and devices

Optics, quantum optics and lasers

Dates

Issue 10 (21 May 2008)

Received 22 January 2008, in final form 19 March 2008

Published 22 April 2008



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