Tae Woong Kim et al 2008 J. Phys. D: Appl. Phys. 41 015406 doi:10.1088/0022-3727/41/1/015406
Tae Woong Kim1, Young Joon Hong2, Gyu-Chul Yi2, Ji-Hwan Kwon1, Miyoung Kim1, Heung Nam Han1, Do Hyun Kim1, Kyu Hwan Oh1, Ki-jeong Kong3 and Young-Kyun Kwon4
Show affiliationsWe report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by selective-area epitaxy using metal-organic chemical-vapour deposition. The GaN microcrystals have similar sizes and shapes. Each microcrystal consists of an upper and a lower part, which are rotated by 30°. Transmission electron microscopy shows that there is a rather clear interface between the two parts of the crystal, suggesting a sudden change in the growth direction. We performed ab initio calculations for the surface energies of hexagonal GaN, and the growth morphology is explained based on surface energy considerations.
68.55.-a Thin film structure and morphology
68.35.Md Surface thermodynamics, surface energies
64.70.Nd Structural transitions in nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Surfaces, interfaces and thin films
Issue 1 (7 January 2008)
Received 4 October 2007, in final form 12 November 2007
Published 19 December 2007
Tae Woong Kim et al 2008 J. Phys. D: Appl. Phys. 41 015406
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