Martin T K Soh et al 2007 J. Phys. D: Appl. Phys. 40 2176 doi:10.1088/0022-3727/40/7/048
Martin T K Soh1, Jeremy Thurn2, J H Thomas III3 and Joseph J Talghader4
Show affiliationsThe thermomechanical response of electron beam deposited nanoporous silicon dioxide is examined using substrate curvature measurements and nanoindentation. Analysis of the thin film bond angle strain distributions versus temperature indicates that low temperature (T < 100 °C) stress hysteresis and tensioning are primarily attributed to hydrogen bonded water desorption. However, at higher temperatures, the absence of water desorption suggests that the thermomechanical behaviour is related to thermally induced bond angle strain redistributions towards the local bonding environment of quartz and thermally grown silicon dioxide. This is supported by the co-efficient of thermal expansion data that trend lower with higher annealing temperatures. The re-absorption of water into the thin film accounts for the reproducibility of the open-loop stress hysteresis and tensioning observations.
68.60.Bs Mechanical and acoustical properties
68.60.Dv Thermal stability; thermal effects
65.40.De Thermal expansion; thermomechanical effects
81.40.Jj Elasticity and anelasticity, stress-strain relations
65.80.+n Thermal properties of small particles, nanocrystals, nanotubes
Surfaces, interfaces and thin films
Issue 7 (7 April 2007)
Received 30 October 2006, in final form 7 February 2007
Published 16 March 2007
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