Quick search Find article
Quick search
Find article

Channel formation in single-monolayer pentacene thin film transistors

B-N Park1, Soonjoo Seo1 and Paul G Evans1,2

Show affiliations


The geometrical arrangement of single-molecule-high islands and the contact between them have large roles in determining the electrical properties of field effect transistors (FETs) based on monolayer-scale pentacene thin films. As the pentacene coverage increases through the submonolayer regime there is a percolation transition where islands come into contact and a simultaneous rapid onset of current. At coverages just above the percolation threshold, the electrical properties vary with geometrical changes in the contacts between the pentacene islands. At higher coverages, the FET mobility is much lower than the mobility measured by the van der Pauw method because of high contact resistances in monolayer-scale pentacene film devices. An increase in the van der Pauw mobility of holes as a function of pentacene coverage shows that second layer islands take part in charge transport.


PACS

85.30.Tv Field effect devices

73.40.Cg Contact resistance, contact potential

73.50.Dn Low-field transport and mobility; piezoresistance

Subjects

Electronics and devices

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 11 (7 June 2007)

Received 8 October 2006, in final form 16 February 2007

Published 18 May 2007



  1. Channel formation in single-monolayer pentacene thin film transistors

    B-N Park et al 2007 J. Phys. D: Appl. Phys. 40 3506

  2. Cyclic cluster model for calculating defects in solids using the local density approximation

    J Miró et al 1997 J. Phys.: Condens. Matter 9 9555

  3. A molecular radical model for hydrogen and muonium in graphite

    S F J Cox et al 2001 J. Phys.: Condens. Matter 13 2169

  4. The di-interstitial in graphite

    C D Latham et al 2008 J. Phys.: Condens. Matter 20 395220

  5. Glide dislocations in diamond: first-principles calculations of similarities with and differences from silicon and the effects of hydrogen

    M I Heggie et al 2002 J. Phys.: Condens. Matter 14 12689

  6. Electron spectroscopy of carbon materials: experiment and theory

    A A El-Barbary et al 2006 J. Phys.: Conf. Ser. 26 149

  7. Direct observation of Hardy's paradox by joint weak measurement with an entangled photon pair

    Kazuhiro Yokota et al 2009 New J. Phys. 11 033011

  8. Type-I D-branes in an H-flux and twisted KO-theory

    Varghese Mathai et al JHEP11(2003)053

  9. Some relations between twisted K-theory and E8 gauge theory

    Varghese Mathai and Hisham Sati JHEP03(2004)016

  10. T-duality for principal torus bundles

    Peter Bouwknegt et al JHEP03(2004)018

View by subject




Export








Please login to access our web services, or create an account if you don't yet have one.

You must have cookies enabled in your web browser to be able to login.

Username
Password

Forgotten your password? Get a new one here.