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Dielectric response on the critical breakdown field in ZnO varistors

Jianying Li1, Bo Li1, Dengyun Zhai1, Shengtao Li1 and M A Alim2

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The breakdown electric field (EB) versus thickness (d) of the metal oxide varistor (MOV) relation is found to be closely related to the degree of microstructural heterogeneity in ZnO–Bi2O3 based varistors. For traditional electroceramic processed samples with various EB there exists a critical inflection point behaviour in the EB versus d plot. However, no critical inflection point was observed for amine processed MOV samples. The scanning electron microscopy shows amine processing largely improves uniformity in the grain size distribution. The dielectric spectra as a function of temperature yielded a thermal activation energy of 0.36 eV for the amine samples. Similar investigation yielded two thermal activation energies of 0.35 eV and 0.26 eV, respectively, for the traditional electroceramic processed samples. From the observed dielectric spectra it is concluded that the disappearance of the critical point behaviour in the EB versus d plot is attributed to the improvement in the degree of uniformity of grain boundary distribution. Thus, the grain boundaries are also presumed to possess an enhanced degree of uniformity.


PACS

77.22.Jp Dielectric breakdown and space-charge effects

85.30.-z Semiconductor devices

84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Subjects

Electronics and devices

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 23 (7 December 2006)

Received 13 September 2006

Published 17 November 2006



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