Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure

Author

Petru Lunca-Popa 1,2,3, J I Brand 1,2, Snjezana Balaz 1,3, Luis G Rosa 1,3, N M Boag 1,3,4, Mengjun Bai 1,2,3, B W Robertson 1,2 and P A Dowben 1,3,5

Affiliations

1 Center for Materials Research and Analysis, 116 Brace Laboratory, University of Nebraska, PO Box 880111, Lincoln, NE 68588-0111, USA
2 College of Engineering and Technology, N104 Walter Scott Engineering Center, 17th & Vine Streets, University of Nebraska-Lincoln, Lincoln, NE 68588-0656, USA
3 Department of Physics and Astronomy, Behlen Laboratory of Physics, University of Nebraska, PO Box 880111, Lincoln, NE 68588-0111, USA
4 Chemistry and Nanotechnology, Institute for Materials Research, Cockcroft Building, University of Salford, Salford M5 4WT, UK
5 Author to whom any correspondence should be addressed.

E-mail

pdowben@unl.edu

Journal

Journal of Physics D: Applied Physics Create an alert RSS this journal

Issue

Volume 38, Number 8

Citation

Petru Lunca-Popa et al 2005 J. Phys. D: Appl. Phys. 38 1248

doi: 10.1088/0022-3727/38/8/023


 
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Abstract

Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C2B10H12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C2B10 boron carbide and is consistent with electron diffraction results.

 
PACS

81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

78.66.Li Other semiconductors

81.05.Hd Other semiconductors

71.22.+i Electronic structure of liquid metals and semiconductors and their alloys

Subjects

Soft matter, liquids and polymers

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 8 (21 April 2005)

Received 5 January 2005

Published 1 April 2005



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