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Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure

Petru Lunca-Popa1,2,3, J I Brand1,2, Snjezana Balaz1,3, Luis G Rosa1,3, N M Boag1,3,4, Mengjun Bai1,2,3, B W Robertson1,2 and P A Dowben1,3,5

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Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C2B10H12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C2B10 boron carbide and is consistent with electron diffraction results.


PACS

81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

78.66.Li Other semiconductors

81.05.Hd Other semiconductors

71.22.+i Electronic structure of liquid metals and semiconductors and their alloys

Subjects

Soft matter, liquids and polymers

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 8 (21 April 2005)

Received 5 January 2005

Published 1 April 2005



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