D McGrouther et al 2005 J. Phys. D: Appl. Phys. 38 3348 doi:10.1088/0022-3727/38/18/003
D McGrouther1, W A P Nicholson, J N Chapman and S McVitie
Show affiliationsA stage has been constructed to supply a variable strength in situ magnetizing field for use in a focused ion beam system. Ion irradiation experiments were performed in the presence of the magnetic field in order to investigate its effect on the localized exchange bias field in thin CoFe/IrMn bilayers. Squares with dimensions 10 × 10 µm2 were directly irradiated by Ga+ ions of energy 30 keV at doses between 1 × 1013 and 1 × 1015 ions cm−2. TEM studies of the magnetization reversal behaviour of the squares showed that bias field reversal could be achieved with the maximum achievable bias field strength being > 50% of that along the original direction.
61.80.Jh Ion radiation effects
75.60.Jk Magnetization reversal mechanisms
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
Condensed matter: electrical, magnetic and optical
Issue 18 (21 September 2005)
Received 28 June 2005, in final form 29 July 2005
Published 2 September 2005
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