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Resistivities of titanium nitride films prepared onto silicon by an ion beam assisted deposition method

Katsuhiro Yokota1, Kazuhiro Nakamura, Tomohiko Kasuya, Katsuhisa Mukai and Masami Ohnishi

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Cubic titanium nitride (TiN) films preferentially oriented to the (200) lattice plane were deposited onto (111) silicon wafers using an ion beam assisted deposition technique with an electron cyclotron resonance ion source for ionizing nitrogen gas and an electron beam evaporator for evaporating Ti metals. The resistivities of the TiN films were inversely proportional to the average size of the crystallites making up the TiN films and decreased with increasing substrate temperature and film thickness. TiN films thicker than 50 nm had resistivities around 30 µ Ω cm, slightly higher than the resistivities of TiN crystals.


PACS

73.61.Le Other inorganic semiconductors

68.55.-a Thin film structure and morphology

81.15.Jj Ion and electron beam-assisted deposition; ion plating

Subjects

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 7 (7 April 2004)

Received 18 September 2003

Published 17 March 2004



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