Katsuhiro Yokota et al 2004 J. Phys. D: Appl. Phys. 37 1095 doi:10.1088/0022-3727/37/7/023
Katsuhiro Yokota1, Kazuhiro Nakamura, Tomohiko Kasuya, Katsuhisa Mukai and Masami Ohnishi
Show affiliationsCubic titanium nitride (TiN) films preferentially oriented to the (200) lattice plane were deposited onto (111) silicon wafers using an ion beam assisted deposition technique with an electron cyclotron resonance ion source for ionizing nitrogen gas and an electron beam evaporator for evaporating Ti metals. The resistivities of the TiN films were inversely proportional to the average size of the crystallites making up the TiN films and decreased with increasing substrate temperature and film thickness. TiN films thicker than 50 nm had resistivities around 30 µ Ω cm, slightly higher than the resistivities of TiN crystals.
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating
Issue 7 (7 April 2004)
Received 18 September 2003
Published 17 March 2004
Katsuhiro Yokota et al 2004 J. Phys. D: Appl. Phys. 37 1095
H Baumann et al 2009 Metrologia 46 178
Erich Gaertig and Kostas D Kokkotas 2009 J. Phys.: Conf. Ser. 189 012016
2005 J. Radiol. Prot. 25 101
Habib Ammari et al 2005 J. Phys.: Conf. Ser. 12 13
P E de Brito and H N Nazareno 2007 Eur. J. Phys. 28 9
S R Gocić et al 2009 J. Phys. D: Appl. Phys. 42 212001
Ilaria Sesia and Patrizia Tavella 2008 Metrologia 45 S134
Alexandru Dasu et al 2003 Phys. Med. Biol. 48 387
D T Bowron 2009 J. Phys.: Conf. Ser. 190 012022