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Deposition of nanosized grains of ferroelectric lead zirconate titanate on thin films using dense plasma focus

Ruby Gupta1, M P Srivastava1,4, V R Balakrishnan2, R Kodama3 and M C Peterson3

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Pb(Zr0.53Ti0.47)O3 (PZT) thin films have been successfully deposited on glass, silicon and ITO coated glass substrates by a 3.3 kJ Mather type dense plasma focus device. The x-ray diffraction spectra of the films deposited on glass substrates kept at a distance of 4.2 cm from the top of the anode with 10, 15 and 25 shots show peaks at 2θ = 31.3° corresponding to the perovskite phase of PZT. Transmission electron microscopy shows the presence of 0.5 nm grains of PZT. The leakage current density is found to be 10−6 A cm−2 at a reverse voltage of 1 V, from current density–voltage (JV) characteristics. The capacitance–voltage (CV) characteristics show a counter-clockwise hysteresis loop with a memory window of 1.2 V. The ferroelectric characteristic has been confirmed using the polarization–field hysteresis loop. The resistance of the film is about 1 GΩ. The spontaneous polarization, remanent polarization and coercive field values are found to be 20.1 µC cm−2, 8.6 µC cm−2 and 79.9 kV cm−1, respectively.


PACS

77.84.Dy Niobates, titanates, tantalates, PZT ceramics, etc.

75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

75.70.Ak Magnetic properties of monolayers and thin films

77.80.-e Ferroelectricity and antiferroelectricity

52.59.Hq Dense plasma focus

68.37.Lp Transmission electron microscopy (TEM)

73.61.Le Other inorganic semiconductors

52.75.-d Plasma devices

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Plasma physics

Dates

Issue 7 (7 April 2004)

Received 1 October 2003

Published 17 March 2004



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