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An investigation of barrier/electrode interfaces and their related influence on tunnelling magnetoresistance using electron holography

F Shen1, T Zhu2, X Xiang3, John Q Xiao3 and Z Zhang1,4

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Electron holography (EH) has been used successfully for studying the barrier shape profiles and barrier/electrodes interfaces in a magnetic tunnel junction (MTJ) that was fabricated with a wedge-shaped Al oxide barrier, and an asymmetrical curve of the tunnelling magnetoresistance (TMR) versus nominal Al thickness has been found. EH results reveal several useful features that are unlikely to be found using other techniques. The asymmetrical TMR curve and the TMR value unachievable with Jullière model are mainly due to the different barrier/electrode interfaces along the wedge. Furthermore, a model of barrier oxidation has been built to explain the TMR behaviour in MTJs.


PACS

73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

61.05.jp Electron holography

68.55.-a Thin film structure and morphology

Subjects

Surfaces, interfaces and thin films

Dates

Issue 11 (7 June 2004)

Received 26 December 2003

Published 12 May 2004



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