X H Ji et al 2004 J. Phys. D: Appl. Phys. 37 1472 doi:10.1088/0022-3727/37/10/009
X H Ji, S P Lau1, G Q Yu, W H Zhong and B K Tay
Show affiliationsAluminium nitride (AlN) films have been fabricated on Si(100) substrates by an ion-beam-assisted filtered cathodic vacuum arc technique at low temperature. The structural and mechanical properties of the AlN films have been investigated using x-ray photoelectron spectroscopy, by means of an x-ray diffractometer, visible Raman spectroscopy, atomic force microscopy and nanoindentation. The AlN films exhibit a predominant a-axis orientation with hardness as high as 14.5 GPa, which may be suitable for surface acoustic wave devices.
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.60.Bs Mechanical and acoustical properties
Issue 10 (21 May 2004)
Received 16 December 2003
Published 28 April 2004
X H Ji et al 2004 J. Phys. D: Appl. Phys. 37 1472
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