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Structural properties and nanoindentation of AlN films by a filtered cathodic vacuum arc at low temperature

X H Ji, S P Lau1, G Q Yu, W H Zhong and B K Tay

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Aluminium nitride (AlN) films have been fabricated on Si(100) substrates by an ion-beam-assisted filtered cathodic vacuum arc technique at low temperature. The structural and mechanical properties of the AlN films have been investigated using x-ray photoelectron spectroscopy, by means of an x-ray diffractometer, visible Raman spectroscopy, atomic force microscopy and nanoindentation. The AlN films exhibit a predominant a-axis orientation with hardness as high as 14.5 GPa, which may be suitable for surface acoustic wave devices.


PACS

81.15.Jj Ion and electron beam-assisted deposition; ion plating

68.55.-a Thin film structure and morphology

79.60.Bm Clean metal, semiconductor, and insulator surfaces

68.60.Bs Mechanical and acoustical properties

68.37.Ps Atomic force microscopy (AFM)

78.66.Fd III-V semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 10 (21 May 2004)

Received 16 December 2003

Published 28 April 2004



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