O Gelhausen et al 2003 J. Phys. D: Appl. Phys. 36 2976 doi:10.1088/0022-3727/36/23/018
O Gelhausen1,3, M R Phillips1 and E M Goldys2
Show affiliationsScanning cathodoluminescence (CL) spectroscopy and imaging were used to study the effect of post-growth processing on the CL efficiency of metal–organic vapour phase epitaxy-grown Mg-doped GaN. In this work, two treatments, thermal annealing in high-purity gaseous atmospheres (N2, O2 and H2(5%)/N2) and low-energy electron beam irradiation (LEEBI), have been investigated. Post-growth annealing in a H2/N2 atmosphere followed by LEEBI leads to a significant enhancement of the free electron-to-bound Mg-acceptor (e, Mg) CL emission and a reduction of nonradiative centres involving native defects. The presented results demonstrate that the combination of post-growth annealing in a H2/N2 atmosphere and LEEBI dissociation of Mg–H complex acceptors significantly improves the light emitting efficiency of Mg-doped p-type GaN. Conversely, the samples annealed in a N2 or O2 atmosphere exhibit a reduced (e, Mg) emission after both annealing and LEEBI treatment.
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.J- Point defects and defect clusters
61.72.uj III–V and II–VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.40.Tv Optical and dielectric properties (related to treatment conditions)
Condensed matter: electrical, magnetic and optical
Issue 23 (7 December 2003)
Received 23 May 2003
Published 19 November 2003
O Gelhausen et al 2003 J. Phys. D: Appl. Phys. 36 2976
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