Investigations on the variable large bandgap semiconductor compound HgBrI

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Published 15 October 2003 2003 IOP Publishing Ltd
, , Citation G A Stanciu et al 2003 J. Phys. D: Appl. Phys. 36 2714 DOI 10.1088/0022-3727/36/21/019

0022-3727/36/21/2714

Abstract

A new ternary compound, HgBrI, having a variable, large bandgap was investigated using different nondestructive methods. The homogeneity of the crystal composition along the growth axis was given from absorption edge measurements performed on different parts of the crystals using classical optical measurements. The atomic composition was determined by x-ray energy dispersive spectroscopy. Based on photoluminescence and reflection measurements using Confocal Scanning Laser Microscopy, the exact position and dimensions of the inhomogeneity regions were established.

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10.1088/0022-3727/36/21/019