Rajesh Das and Swati Ray 2003 J. Phys. D: Appl. Phys. 36 152 doi:10.1088/0022-3727/36/2/312
Zinc oxide—a transparent, conducting IR-reflector prepared by rf-magnetron sputtering
Rajesh Das and Swati Ray
Show affiliationsAl doped zinc oxide thin films with different electrical and optical properties have been developed by both non-reactive and reactive rf-magnetron sputtering in Ar and Ar+H2 atmospheres, respectively. The thin films prepared under Ar+H2 gas ambient at substrate temperatures of 100°C and 300°C show high conductivity and improved IR-reflectivity. The lowest resistivity obtained is 4.5×10−4 Ω cm at 300°C. The transmission of the ZnO : Al film in the visible range is above 90% and that at 1400 nm is only 3.2%. Most of the IR-region is thus reflected. The carrier concentration of this transparent, conducting ZnO film prepared under Ar+H2 atmosphere is 2.3×1021 cm−3. Tranmission electron micrographs reveal that the average crystallite of the sample deposited under Ar+H2 ambient is smaller compared to those prepared under Ar ambient. The 
100
, 002 orientations of ZnO with wurtzite structure are observed from transmission electron diffraction pattern.
- PACS
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68.37.Lp Transmission electron microscopy (TEM)
- Subjects
- Dates
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Issue 2 (21 January 2003)
Received 23 July 2002
Published 30 December 2002
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Zinc oxide—a transparent, conducting IR-reflector prepared by rf-magnetron sputtering
Rajesh Das and Swati Ray 2003 J. Phys. D: Appl. Phys. 36 152
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