C Roder et al 2003 J. Phys. D: Appl. Phys. 36 A188 doi:10.1088/0022-3727/36/10A/338
C Roder1,4, H Heinke1, D Hommel1, T M Katona2, J S Speck3 and S P DenBaars3
Show affiliationsThin uncoalesced gallium nitride (GaN) layers grown on Si(111) by maskless cantilever epitaxy (CE) have been investigated using high resolution x-ray diffraction at variable temperatures. The crystallographic tilt of the free-hanging wings relative to the stripe regions of the samples was determined for different temperatures. With increased temperature the wing tilt decreased non-linearly and seemed to approach a constant value at higher temperatures. The wing tilts of two samples differing at room temperature by one order of magnitude were found to vary by less than 20% between 300 and 1020 K. This suggests that the main part of the crystallographic wing tilt is not thermally induced for samples grown with the CE technique.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.20.-e Optical properties of bulk materials and thin films
Condensed matter: electrical, magnetic and optical
Issue 10A (21 May 2003)
Received 14 September 2002
Published 28 April 2003
C Roder et al 2003 J. Phys. D: Appl. Phys. 36 A188
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