Chandan Banerjee et al 2002 J. Phys. D: Appl. Phys. 35 3060 doi:10.1088/0022-3727/35/23/305
Chandan Banerjee, Arindam Sarker and A K Barua
Show affiliationsLow gap (~1.6 eV) a-Si : H films have been prepared by using helium diluted silane as source gas mixture in the usual radiofrequency plasma enhanced chemical vapour deposition method (13.56 MHz). The films have characteristics suitable for use as active layer of the bottom cell of a dual gap double junction a-Si solar cell. The films have been prepared at different rf-power densities and chamber pressures and characterized in detail. The role played by helium in improving the structure of a-Si : H and lowering of the band gap has been analysed. The cells fabricated with the said material show higher short circuit current density (Jsc = 8.9 mA cm−2) and lower light induced degradation (9–10%) before stabilization.
84.60.Jt Photoelectric conversion: solar cells and arrays
85.60.Bt Optoelectronic device characterization, design, and modeling
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Issue 23 (07 December 2002)
Received 19 July 2002
Published 18 November 2002
Chandan Banerjee et al 2002 J. Phys. D: Appl. Phys. 35 3060
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