Gregory V Morozov et al 2002 J. Phys. D: Appl. Phys. 35 3052 doi:10.1088/0022-3727/35/23/304
Gregory V Morozov1, D W L Sprung1 and J Martorell2
Show affiliationsWe design an N-cell anti-reflection coating for electron transport through an arbitrary periodic semiconductor heterostructure. Stability conditions are derived which allow one to make an Nth order zero of the reflection amplitude at the design energy. Examples are given for up to N = 4 cells, showing that 95% average transmissivity can be obtained.
73.63.-b Electronic transport in nanoscale materials and structures
Issue 23 (07 December 2002)
Received 21 August 2002
Published 18 November 2002
Gregory V Morozov et al 2002 J. Phys. D: Appl. Phys. 35 3052
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