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Design of electron band-pass filters for semiconductor superlattices

Gregory V Morozov1, D W L Sprung1 and J Martorell2

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We design an N-cell anti-reflection coating for electron transport through an arbitrary periodic semiconductor heterostructure. Stability conditions are derived which allow one to make an Nth order zero of the reflection amplitude at the design energy. Examples are given for up to N = 4 cells, showing that 95% average transmissivity can be obtained.


PACS

84.30.Vn Filters

73.63.-b Electronic transport in nanoscale materials and structures

Subjects

Electronics and devices

Nanoscale science and low-D systems

Dates

Issue 23 (07 December 2002)

Received 21 August 2002

Published 18 November 2002



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