Yeau-Ren Jeng and Hung-Jung Tsai 2002 J. Phys. D: Appl. Phys. 35 1585 doi:10.1088/0022-3727/35/13/322
Yeau-Ren Jeng and Hung-Jung Tsai
Show affiliationsChemical mechanical polishing (CMP) is a key technique for wafer global planarization. Many studies have been conducted in recent years to analyse the slurry flow between a pad and a wafer due to its importance in CMP processing. In these studies, however, the grains in the slurry were not considered. Thus this investigation uses a grain flow model to analyse the slurry flow between wafer and pad. The proposed model predicts the film thickness of the slurry flow with various convex wafer curvature radius under a variety of the CMP parameters including load, rotation speed and grain size. The theoretical results compare well with experimental data in the literature. This study elucidates grain flow during CMP processing and further contributes to understanding of the CMP mechanism.
47.55.Kf Multiphase and particle-laden flows
Issue 13 (7 July 2002)
Received 13 February 2002
Published 18 June 2002
Yeau-Ren Jeng and Hung-Jung Tsai 2002 J. Phys. D: Appl. Phys. 35 1585
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