Yongqing Fu 1, Chang Q Sun 2,4, Hejun Du 3 and Bibo Yan 3
1
School of MPE, Nanyang Technological University, Singapore 639798
2
School of EEE, Nanyang Technological University, Singapore 639798
3
School of MPE, Nanyang Technological University, Singapore 639798
4
Author to whom correspondence should be addressed.
Journal of Physics D: Applied Physics Create an alert RSS this journal
Yongqing Fu et al 2001 J. Phys. D: Appl. Phys. 34 1430
It is shown that large and well faceted hexagonal crystallites can grow on Si and Ti substrates under higher nitrogen gas flow in the gaseous mixture of CH4 and H2 in the normal process of diamond deposition using microwave plasma chemical vapour deposition (MP-CVD). Grazing incidence x-ray diffraction (GIXRD), energy dispersive x-ray spectrometry (EDX), wavelength dispersive x-ray spectroscopy (WDX) and Raman analysis revealed that these crystals are silicon carbonitride rather than carbonitride as we expected and usually regarded. This indicates that the hypothetical covalent carbonitride is not as easily formed as the crystallite with Si substitution. Comparing films deposited on Ti alloy substrates, with and without Si chips present during the deposition, we found that the Si chips activated by the plasma sputtering provides Si sources for crystallite SiCN formation on Ti substrate. The hexagonal SiCN structure and its lower hardness are attributed to the C3v-symmetric quasi-tetrahedral nitride with a nonbonding lone pair. The involvement of the less electronegative Si specimen may make the SiCN form easier than the covalent carbonitride.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
82.80.Ej X-ray, Mössbauer, and other gamma-ray spectroscopic analysis methods
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 9 (7 May 2001)
Received 12 February 2001
Yongqing Fu et al 2001 J. Phys. D: Appl. Phys. 34 1430
B F Schutz 1999 Class. Quantum Grav. 16 A131
C D McGuinness et al 2004 Meas. Sci. Technol. 15 L19
M P Lopez Sancho et al 1984 J. Phys. F: Met. Phys. 14 1205
K Svozil et al 1996 J. Phys. A: Math. Gen. 29 L351
Guocheng Yuan and Brian R Hunt 1999 Nonlinearity 12 1207
W R G James et al 2008 J. Phys. A: Math. Theor. 41 055001
G S Hall and Lucy MacNay 2005 Class. Quantum Grav. 22 1493
P Lévai et al 2001 J. Phys. G: Nucl. Part. Phys. 27 703
R Goebel and M Stock 2003 Metrologia 40 02001