C Pennetta et al 2001 J. Phys. D: Appl. Phys. 34 1421 doi:10.1088/0022-3727/34/9/321
C Pennetta1,2, L Reggiani1,2, Gy Trefán1,2, F Fantini1,3, A Scorzoni4 and I De Munari5
Show affiliationsWe present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network in the presence of degradation and recovery processes. The main features of experiments including Black's law, times to failure distribution, current threshold for the onset of electromigration, etc are properly reproduced. Compositional effects showing up in early resistance changes measured on Al-0.5%Cu and Al-1%Si lines are also studied.
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
Issue 9 (7 May 2001)
Received 25 January 2001
C Pennetta et al 2001 J. Phys. D: Appl. Phys. 34 1421
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