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Inductively coupled radio frequency methane plasma simulation

K Bera1, B Farouk1,3 and P Vitello2

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A self-consistent two-dimensional radio frequency inductively coupled glow discharge model has been developed in cylindrical coordinates using a fluid model. The objective of the study is to provide insight into charged species dynamics and investigate their effects on plasma process for a methane discharge. The model includes continuity and energy equations for electrons and continuity, momentum and energy equations for positive and negative ions. An electromagnetic model that considers the electric field due to the space charge within the plasma and due to inductive power coupling is also incorporated. For an inductively coupled methane discharge we expect to find higher fluxes of ions and radicals to the cathode, and hence a higher deposition/etch rate for a high-density plasma. The independent control of ion energy to the cathode in an inductively coupled discharge will facilitate control on film deposition/etch rate and uniformity on the wafer. Swarm data as a function of the electron energy are provided as input to the model. The model predicts the electron density, ion density and their fluxes and energies to the cathode. The radical and neutral densities in the discharge are calculated using a gas phase chemistry model. The diamond-like-carbon thin-film deposition/etch rate is predicted using a surface chemistry model. The gas phase chemistry model considers the diffusion of radicals and neutrals along with creation and loss terms. The surface deposition/etching process involves adsorption-desorption, adsorption layer reaction, ion stitching, direct ion incorporation and carbon sputtering.


PACS

52.80.Pi High-frequency and RF discharges

52.25.Fi Transport properties

52.65.Kj Magnetohydrodynamic and fluid equation

52.77.Dq Plasma-based ion implantation and deposition

52.80.Hc Glow; corona

52.77.Bn Etching and cleaning

52.25.Dg Plasma kinetic equations

Subjects

Plasma physics

Dates

Issue 10 (21 May 2001)

Received 18 August 2000, in final form 10 January 2001



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