J Dai et al 2000 J. Phys. D: Appl. Phys. 33 L65 doi:10.1088/0022-3727/33/11/101
J Dai1,2,3,4, L Spinu1, K-Y Wang1, L Malkinski1 and J Tang1,2
Show affiliationsWe report a switching of conducting channel and magnetoresistance (MR) in very thin metallic films deposited on Si substrate with native SiO2 surface. The resistance of the metal-oxide-semiconductor (MOS) structure significantly increases when the temperature is lowered to a threshold value Tc of about 250 K. At room temperature the samples exhibit a high conductivity, and a positive MR of about 18%. Below Tc, the resistivity is increased by ~50% and the positive MR disappears. This effect can be explained by the conducting channel switching from the Si electron inversion layer to the upper metallic films when the temperature is decreased. It has also been found that the MR of Cu80Co20-SiO2-Si structure changes sign with the change of temperature, which is correlated to the switching of the conducting channel.
75.60.-d Domain effects, magnetization curves, and hysteresis
73.61.At Metal and metallic alloys
75.47.De Giant magnetoresistance
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
Issue 11 (7 June 2000)
Received 27 January 2000
J Dai et al 2000 J. Phys. D: Appl. Phys. 33 L65
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