V D Frolov et al 1999 J. Phys. D: Appl. Phys. 32 815 doi:10.1088/0022-3727/32/7/010
V D Frolov, A V Karabutov, V I Konov, S M Pimenov and A M Prokhorov
Show affiliationsThe principles of scanning tunnelling microscopy (STM) are extended to the study of field electron emission from metal, semiconducting and semi-insulating materials. A specially designed, high-vacuum STM device called a scanning tunnelling field emission microscope (STFEM) is constructed, and new measuring procedures are developed to examine complex physical properties of emission centres. Providing high bias voltages and fast mapping of large squares, the STFEM allows one to obtain reliable statistical data on surface properties, namely topography, emission intensity, surface potential distribution and local electroconductivity. Results from a study of low-field electron emission from CVD diamond films are described to illustrate the functional capabilities of the new STM device. It was found that the diamond films studied are composed of nanograined phases distinguished by their physical properties. It has also been noted that the low-field electron emission from the studied samples is associated with the interfaces of these phases.
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
79.70.+q Field emission, ionization, evaporation, and desorption
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Issue 7 (7 April 1999)
Received 9 April 1998, in final form 23 October 1998
V D Frolov et al 1999 J. Phys. D: Appl. Phys. 32 815
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