O Ambacher 1998 J. Phys. D: Appl. Phys. 31 2653 doi:10.1088/0022-3727/31/20/001
O Ambacher
Show affiliationsRecent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.
01.30.Rr Surveys and tutorial papers; resource letters
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Dv Thermal stability; thermal effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
81.10.-h Methods of crystal growth; physics of crystal growth
Surfaces, interfaces and thin films
Optics, quantum optics and lasers
Issue 20 (21 October 1998)
Received 18 February 1997, in final form 15 June 1998
O Ambacher 1998 J. Phys. D: Appl. Phys. 31 2653
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