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Growth and applications of Group III-nitrides

REVIEW ARTICLE

O Ambacher

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REVIEW ARTICLE

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.


PACS

01.30.Rr Surveys and tutorial papers; resource letters

68.55.A- Nucleation and growth

81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

68.60.Dv Thermal stability; thermal effects

81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

81.10.-h Methods of crystal growth; physics of crystal growth

73.61.Le Other inorganic semiconductors

78.66.Li Other semiconductors

85.60.Jb Light-emitting devices

Subjects

Electronics and devices

Semiconductors

Surfaces, interfaces and thin films

Optics, quantum optics and lasers

Condensed matter: structural, mechanical & thermal

Education and communication

Dates

Issue 20 (21 October 1998)

Received 18 February 1997, in final form 15 June 1998



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