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Isothermal annealing of ion-bombardment-induced amorphousness in semiconductors

G Carter

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A theoretical model is presented to describe the isothermal annealing of semiconductors partially amorphized by ion bombardment. The annealing behaviour of amorphous zones is approximated by first-order reaction kinetics and the increasing complexity of amorphousness with the fraction of material amorphized is approximated by a population of activated processes for which the mean activation energy increases with fractional amorphization. The model predictions are compared with limited available experimental data and shown to give satisfactory qualitative agreements and suggestions are made for model refinement.


PACS

61.43.Dq Amorphous semiconductors, metals, and alloys

61.82.Fk Semiconductors

61.80.Jh Ion radiation effects

61.72.Cc Kinetics of defect formation and annealing

81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Subjects

Semiconductors

Condensed matter: structural, mechanical & thermal

Dates

Issue 6 (14 June 1996)

Received 25 January 1996



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