G Carter 1996 J. Phys. D: Appl. Phys. 29 1619 doi:10.1088/0022-3727/29/6/030
G Carter
Show affiliationsA theoretical model is presented to describe the isothermal annealing of semiconductors partially amorphized by ion bombardment. The annealing behaviour of amorphous zones is approximated by first-order reaction kinetics and the increasing complexity of amorphousness with the fraction of material amorphized is approximated by a population of activated processes for which the mean activation energy increases with fractional amorphization. The model predictions are compared with limited available experimental data and shown to give satisfactory qualitative agreements and suggestions are made for model refinement.
61.43.Dq Amorphous semiconductors, metals, and alloys
61.80.Jh Ion radiation effects
Issue 6 (14 June 1996)
Received 25 January 1996
G Carter 1996 J. Phys. D: Appl. Phys. 29 1619
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