C C Phillips et al 1984 J. Phys. D: Appl. Phys. 17 1713 doi:10.1088/0022-3727/17/8/025
C C Phillips, A E Hughes and W Sibbett
Show affiliationsSemitransparent GaAs films bonded on to glass substrates with a GaxAl1-xAs strain-matching layer have been activated to give negative electron affinity (NEA) characteristics in a commercial UHV apparatus. Quantitative surface analysis of the photocathodes before and after activation show a Cs-O overlayer with a well defined Cs2O stoichiometry and a thickness of approximately 1.3 nm. Measurements of photoelectron energy distribution curves (EDC) from the cathodes confirm the NEA mode of operation, giving very narrow almost wavelength-independent 'thermalised' electron distributions throughout the photosensitivity range. Measurements of the response times of different GaAs NEA cathodes using a special UHV demountable Synchroscan streak camera gave response times as low as approximately 8 ps, suggesting the feasibility of a medium-high temporal resolution streak camera sensitive in the technologically important 1.3-1.55 mu m spectral region.
82.80.Pv Electron spectroscopy (x-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
Issue 8 (14 August 1984)
C C Phillips et al 1984 J. Phys. D: Appl. Phys. 17 1713
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