G Majni et al 1984 J. Phys. D: Appl. Phys. 17 L77 doi:10.1088/0022-3727/17/5/002
Growth kinetics of NiSi on (100) and (111) silicon
G Majni, F Della Valle and C Nobili
Show affiliationsThe interaction of Ni film deposited on Si has been studied. Growth kinetics of NiSi on (111) and (100) silicon single crystals are reported. Activation energies for NiSi are found to be 1.23 eV for (100) and 1.83 eV for (111).
- PACS
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81.10.-h Methods of crystal growth; physics of crystal growth
- Subjects
- Dates
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Issue 5 (14 May 1984)
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Growth kinetics of NiSi on (100) and (111) silicon
G Majni et al 1984 J. Phys. D: Appl. Phys. 17 L77
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