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The resistivity inhomogeneity and the maximum possible mean resistivity of neutron-transmutation doped silicon

T Gessner and B Schmidt

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Neutron-transmutation doping of silicon stimulates to a high degree the production of high resistivity n-type silicon, adjustable in the resistivity range of rho n=1...100 k Omega cm. Theoretical analysis of the resistivity inhomogeneities of neutron-transmutation doped silicon (NTD-Si) and the maximum possible mean resistivity as a function of the electrical parameters of the p-type Si starting material is presented. Theoretical and experimental results are compared in the resistivity range rho n=2-50 k Omega cm.


PACS

61.80.Hg Neutron radiation effects

61.72.Tt Doping and impurity implantation in germanium and silicon

73.61.Cw Elemental semiconductors

61.72.Cc Kinetics of defect formation and annealing

Subjects

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 5 (14 May 1983)



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