T Gessner and B Schmidt 1983 J. Phys. D: Appl. Phys. 16 861 doi:10.1088/0022-3727/16/5/017
T Gessner and B Schmidt
Show affiliationsNeutron-transmutation doping of silicon stimulates to a high degree the production of high resistivity n-type silicon, adjustable in the resistivity range of rho n=1...100 k Omega cm. Theoretical analysis of the resistivity inhomogeneities of neutron-transmutation doped silicon (NTD-Si) and the maximum possible mean resistivity as a function of the electrical parameters of the p-type Si starting material is presented. Theoretical and experimental results are compared in the resistivity range rho n=2-50 k Omega cm.
61.80.Hg Neutron radiation effects
61.72.Tt Doping and impurity implantation in germanium and silicon
Issue 5 (14 May 1983)
T Gessner and B Schmidt 1983 J. Phys. D: Appl. Phys. 16 861
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