J Tardy et al 1981 J. Phys. D: Appl. Phys. 14 339 doi:10.1088/0022-3727/14/2/025
J Tardy, J M Poitevin and G Lemperiere
Show affiliationsDC reactive sputtering of silicon in an argon-hydrogen discharge has been studied using the glow discharge mass spectrometry method. The influence of major discharge parameters, i.e. the power density and the hydrogen partial pressure on both atomic (Ar+, Si+) and molecular (SiH+, SiH3+, H3+, ArH+) ionic species arriving on the substrate, has been investigated. It is deduced that the reaction between silicon and hydrogen at the target surface is a very likely process leading to the formation of SiH molecules which are sputtered and ionised in the discharge. The influence of the discharge parameters on argon and hydrogen impinging on the substrate are also discussed.
Issue 2 (14 February 1981)
J Tardy et al 1981 J. Phys. D: Appl. Phys. 14 339
D P Datta and S Mukherjee 1982 J. Phys. A: Math. Gen. 15 2369
Anatol Odzijewicz and Alina Ryzko 2002 J. Phys. A: Math. Gen. 35 747
Heang-Ping Chan et al 1995 Phys. Med. Biol. 40 857
Martin Nikl 2006 Meas. Sci. Technol. 17 R37
P Boguslawski and I Gorczyca 1994 Semicond. Sci. Technol. 9 2169
Richard P Feynman et al 2003 Eur. J. Phys. 24 330
Cheng-Lin Bai and Hong Zhao 2006 Phys. Scr. 73 429
R Chang and P W Graves 1965 Br. J. Appl. Phys. 16 715
John C. Collins and Xiaomin Zu JHEP06(2002)018