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Controlled growth of arsenic trisulphide films for coupling integrated optical devices

G Stewart, R H Hutchins and P J R Laybourn

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The optical properties of evaporated films of arsenic trisulphide are examined in some detail and compared with bulk properties. It is proposed to use the films as a means of interconnecting integrated optical devices in high and low index materials and also for the coupling of sandwich ribbon fibres to optical waveguides in lithium niobate. To be effective, the films must be formed with a high degree of precision and control of film thickness and index to better than 0.01 mu m and 0.01, respectively, is obtained. Stability of the films under illumination is also discussed.


PACS

78.66.-w Optical properties of specific thin films

42.82.Ds Interconnects, including holographic interconnects

81.15.Ef Vacuum deposition

42.82.Et Waveguides, couplers, and arrays

Subjects

Surfaces, interfaces and thin films

Optics, quantum optics and lasers

Dates

Issue 2 (14 February 1981)



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