C A Dimitriadis 1981 J. Phys. D: Appl. Phys. 14 2269 doi:10.1088/0022-3727/14/12/016
Determination of bulk diffusion length in thin semiconductor layers by SEM-EBIC
C A Dimitriadis
Show affiliationsThe SEM-EBIC current through a Schottky diode, with the junction plane parallel to the surface of a thin semiconductor layer, is calculated when the electron beam of the SEM is line-scanned across the surface. It is shown that the bulk diffusion length of minority carriers can be accurately determined from the dependence of EBIC decay on layer thickness. This method is applied to n-type LPE GaP.
- PACS
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68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
- Subjects
- Dates
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Issue 12 (14 December 1981)
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Determination of bulk diffusion length in thin semiconductor layers by SEM-EBIC
C A Dimitriadis 1981 J. Phys. D: Appl. Phys. 14 2269
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