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CdS-metal barriers from photovoltage measurements

M Bujatti

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Potential barriers between CdS and different metals have been measured on CdS thin films with evaporated contacts by observing the saturation photovoltage at high light intensities. The results agree with Schottky's model for a metal-semiconductor junction, yielding a value of 4centerdot22 ev for the electron affinity of CdS.


PACS

73.61.Ga II-VI semiconductors

73.40.Ns Metal-nonmetal contacts

73.50.Pz Photoconduction and photovoltaic effects

73.30.+y Surface double layers, Schottky barriers, and work functions

Subjects

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 5 (May 1968)

Received 27 November 1967



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