M Jaros 1972 J. Phys. C: Solid State Phys. 5 1985 doi:10.1088/0022-3719/5/15/013
M Jaros
Show affiliationsThe ground state energy and wavefunction of Zn- impurity in silicon is calculated using a model in which a realistic pseudopotential description of both the impurity potential and the host crystal band structure is taken into account. The frequency dependent photoionization cross section is obtained via the wavefunction in favourable agreement with experiment. Comparison with other acceptors in silicon is given and ground state energies of B, Al, Ga and In in silicon are also presented.
71.20.Mq Elemental semiconductors
Issue 15 (7 August 1972)
M Jaros 1972 J. Phys. C: Solid State Phys. 5 1985
J T Chalker and P D Coddington 1988 J. Phys. C: Solid State Phys. 21 2665
S B Ota 1988 J. Phys. C: Solid State Phys. 21 1441
C Cheng et al 1988 J. Phys. C: Solid State Phys. 21 1049
A Girard et al 1987 J. Phys. C: Solid State Phys. 20 601
K T Park et al 1987 J. Phys. C: Solid State Phys. 20 1241
I D Vagner 1982 J. Phys. C: Solid State Phys. 15 4033
A Yanase and A Hasegawa 1980 J. Phys. C: Solid State Phys. 13 1989
G S Dubey et al 1979 J. Phys. C: Solid State Phys. 12 L103
P W Tasker 1979 J. Phys. C: Solid State Phys. 12 4977