A K Das et al 1988 J. Phys. C: Solid State Phys. 21 357 doi:10.1088/0022-3719/21/2/019
A K Das, M L Glasser and S H Payne
Show affiliationsAfter a brief introduction to the semiconductor heterojunction devices in which a two-dimensional electron gas can be realised and can be subjected to a periodic potential through a grating, the linear response function for this periodically modulated system is calculated in the random phase approximation. Two solvable models have been considered, based on the anisotropic electron kinematics arising from the periodic potential. For the first model, approximate and exact results are obtained when (the Fermi level) EF>2t (half the band width) while, for the second model, exact results are obtained when EF>2t as well as EF<2t. Results for the static polarisability and the plasmon dispersion are explicitly displayed.
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
Issue 2 (20 January 1988)
A K Das et al 1988 J. Phys. C: Solid State Phys. 21 357
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