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The electronic band structures for zincblende and wurtzite BeO

K J Chang, S Froyen and M Cohen

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The self-consistent electronic band structures for zincblende and wurtzite BeO are calculated using first-principles pseudopotentials. The calculated direct band gap for wurtzite BeO is consistent with experimental measurement, and the valence-band width is also in good agreement with experiment; however, the value for the forbidden band gap is underestimated. For the hypothetical zincblende compound, an indirect band gap is found. The authors present the band structure, density of states and the valence charge density in a (110) plane for both crystal structures.


PACS

71.20.Nr Semiconductor compounds

61.66.Fn Inorganic compounds

71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)

71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Condensed matter: structural, mechanical & thermal

Dates

Issue 18 (30 June 1983)



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