S Noor Mohammad 1980 J. Phys. C: Solid State Phys. 13 2685 doi:10.1088/0022-3719/13/14/010
S Noor Mohammad
Show affiliationsBased on an analytical approximation (recently proposed by Joyce and Dixon) for the Fermi energy of an ideal Fermi gas, an expression for the Fermi energy of zincblende-symmetry narrow-gap semiconductors with spherical energy bands is derived. A formula for the Fermi-Dirac integral for such semiconductors is given and certain properties of the integral are discussed. As an additional study, the role of this Fermi-Dirac integral towards the convergence of the expansion of the screening charge density for impurity ions in semiconductors is described.
Issue 14 (20 May 1980)
S Noor Mohammad 1980 J. Phys. C: Solid State Phys. 13 2685
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