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Fermi energy and Fermi-Dirac integrals for zincblende-symmetry narrow-gap semiconductors with spherical energy bands

S Noor Mohammad

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Based on an analytical approximation (recently proposed by Joyce and Dixon) for the Fermi energy of an ideal Fermi gas, an expression for the Fermi energy of zincblende-symmetry narrow-gap semiconductors with spherical energy bands is derived. A formula for the Fermi-Dirac integral for such semiconductors is given and certain properties of the integral are discussed. As an additional study, the role of this Fermi-Dirac integral towards the convergence of the expansion of the screening charge density for impurity ions in semiconductors is described.


PACS

71.20.Nr Semiconductor compounds

71.55.Ht Other nonmetals

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 14 (20 May 1980)



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  10. Preface

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