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Indirect exchange interaction in extremely non-parabolic zero-gap semiconductors

C Lewiner and G Bastard

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The indirect exchange interaction between two localised magnetic moments is calculated for Hg1-xMnxTe alloys near the zero-gap semiconductor transition. For such Mn concentrations the non-parabolic effects are overwhelming and have been accounted for properly. The electron-heavy-hole virtual transitions are shown to be larger than the electron-light-hole transitions. The net exchange integral is antiferromagnetic; the numerical value of the Curie-Weiss temperature is calculated and compared with experimental determinations.


PACS

75.30.Et Exchange and superexchange interactions

71.20.Nr Semiconductor compounds

75.50.Pp Magnetic semiconductors

75.30.Cr Saturation moments and magnetic susceptibilities

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 12 (30 April 1980)



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