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Characteristics derived from transient current measurements in thin RF sputtered Al2O3 films

P R Mason and V Nathoo

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Transient current responses I to a range of step voltages V applied to samples of various thickness L over a range of temperatures T have been previously described. From these responses, the authors plot families of characteristics such as I(V), I(T) and I(L) with two of the remaining three parameters constant while the third is changed by steps. The resulting characteristics are discussed in terms of the same ideas advanced previously for the transient responses. These are that the current is both bulk and contact controlled. Transport in the bulk is in both localised and extended states, and space charge and polarisation effects are important. The contacts are blocking at low fields and low temperatures, and become more injecting as either or both are increased.


PACS

73.61.Ng Insulators

68.55.-a Thin film structure and morphology

73.50.-h Electronic transport phenomena in thin films

Subjects

Surfaces, interfaces and thin films

Dates

Issue 7 (14 April 1978)



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